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As the inventor of a new category of very high capacity and high-performance non-volatile resistive RAM (RRAM) technology, Crossbar has developed a simple and easily manufactured RRAM-based memory technology that can scale up to 1 terabyte (TB) on a chip the size of a postage stamp. Its simple structure allows 3D stacking for multiple terabytes on a chip. Manufactured with standard CMOS processes, the simplicity of Crossbar’s RRAM technology makes it possible to easily stack non-volatile memory on top of microcontroller and other logic on FPGAs and highly integrated SOCs at advanced nodes.   With 20X higher performance and 20X lower power ...

As the inventor of a new category of very high capacity and high-performance non-volatile resistive RAM (RRAM) technology, Crossbar has developed a simple and easily manufactured RRAM-based memory technology that can scale up to 1 terabyte (TB) on a chip the size of a postage stamp. Its simple structure allows 3D stacking for multiple terabytes on a chip. Manufactured with standard CMOS processes, the simplicity of Crossbar’s RRAM technology makes it possible to easily stack non-volatile memory on top of microcontroller and other logic on FPGAs and highly integrated SOCs at advanced nodes.   With 20X higher performance and 20X lower power than NAND, and 10x the endurance at half the die size, Crossbar has shattered traditional technology barriers for NOR (code), NAND (data) and embedded memory applications and will enable a new wave of electronics innovation for consumer, enterprise, mobile, industrial and connected device applications.   As the exclusive holder of resistive RAM (RRAM) patents from the University of Michigan, Crossbar has filed 100 unique patents, with 30 already issued, relating to the development, commercialization and manufacturing of RRAM technology. Privately held, Crossbar is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers and Northern Light Venture Capital.

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